STD7NB20 n - channel enhancement mode powermesh ? mosfet n typical r ds(on) =0.3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized n for trough-hole version contact sales office description using the latest high voltage mesh overlay ? process, sgs-thomson has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the company's proprietary edge termination structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive internal schematic diagram december 1997 1 3 dpak to-252 (suffix ot4o) absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 200 v v dgr drain- gate voltage (r gs =20k w ) 200 v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c7a i d drain current (continuous) at t c =100 o c5a i dm ( ? ) drain current (pulsed) 28 a p tot total dissipation at t c =25 o c55w derating factor 0.44 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 5.5 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 7a, di/dt 200 a/ m s, v dd v (br)dss ,tj t jmax type v dss r ds(on) i d STD7NB20 200 v < 0.40 w 7a 1/8
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 2.27 100 1.5 275 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 7a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 100 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 200 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c =125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d =3.5 a 0.30 0.40 w i d(o n) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 7a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =3.5 a 2 3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 470 135 22 650 190 30 pf pf pf STD7NB20 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =100v i d =5a r g =4.7 w v gs =10v (see test circuit, figure 3) 10 15 14 20 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =160v i d =10 a v gs =10v 17 7.5 5.5 24 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =160v i d =10a r g =4.7 w v gs =10v (see test circuit, figure 5) 8 10 20 11 14 28 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 7 28 a a v sd ( * ) forward on voltage i sd =7a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a di/dt = 100 a/ m s v dd =50v t j =150 o c (see test circuit, figure 5) 170 980 11.5 ns nc a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance STD7NB20 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STD7NB20 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STD7NB20 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STD7NB20 6/8
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 13 == b e == b2 g 2 a c2 c h a1 detail oao a2 detail oao to-252 (dpak) mechanical data 0068772-b STD7NB20 7/8
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersede s and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in italy - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a ... STD7NB20 8/8
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